SQJ844EP-T1-GE3【PDF 2/7 页】MOSFET N-CH D-S 30V PPAK 8SOIC

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SQJ844EP

www.vishay.com

SPECIFICATIONS (T C = 25 °C, unless otherwise noted)

Vishay Siliconix

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Source Leakage

V DS

V GS(th)

I GSS

V GS = 0, I D = 250 μA

V DS = V GS , I D = 250 μA

V DS = 0 V, V GS = ± 20 V

V GS = 0 V

V DS = 30 V

30

1.5

-

-

-

2.0

-

-

-

2.5

± 100

1

V

nA

Zero Gate Voltage Drain Current

I DSS

V GS = 0 V

V DS = 30 V, T J = 125 °C

-

-

50

μA

V GS = 0 V

V DS = 30 V, T J = 175 °C

-

-

150

On-State Drain Current a

I D(on)

V GS = 10 V

V DS ≥ 5 V

30

-

-

A

V GS = 10 V

I D = 10.2 A

-

0.020

0.024

Drain-Source On-State Resistance a

R DS(on)

V GS = 4.5 V

V GS = 10 V

I D = 8.7 A

I D = 10.2 A, T J = 125 °C

-

-

0.030

0.030

0.037

0.036

Ω

V GS = 10 V

I D = 10.2 A, T J = 175 °C

-

0.036

0.043

Forward Transconductance b

g fs

V DS = 15 V, I D = 10.2 A

-

20

-

S

Dynamic b

Input Capacitance

C iss

-

960

1150

Output Capacitance

C oss

V GS = 0 V

V DS = 15 V, f = 1 MHz

-

275

330

pF

Reverse Transfer Capacitance

Total Gate Charge c

C rss

Q g

-

-

95

18

115

27

Gate-Source

Charge c

Q gs

V GS = 10 V

V DS = 15 V, I D = 10 A

-

3

-

nC

Gate-Drain Charge c

Q gd

-

3

-

Gate Resistance

Time c

Turn-On Delay

Rise Time c

Turn-Off Delay Time c

Fall Time c

R g

t d(on)

t r

t d(off)

t f

f = 1 MHz

V DD = 15 V, R L = 15 Ω

I D ? 1 A, V GEN = 10 V, R g = 6 Ω

0.74

-

-

-

-

4.08

9

11

27

8

7.42

11

14

33

10

Ω

ns

Source-Drain Diode Ratings and Characteristics b

Pulsed Current a

I SM

-

-

32

A

Forward Voltage

V SD

I F = 2.9 A, V GS = 0

-

0.8

1.2

V

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

S11-2288-Rev. C, 28-Nov-11

2

Document Number: 65530

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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